High current thin film transistor

Details High current thin film transistor High current thin film transistor

1983-11-08

1985-10-15

James, Andrew J.

357 2, 357 4, 357 234, 357 231, 357 41, H01L 2978

Patent

active

045477892

ABSTRACT:
A new and improved thin film field effect transistor has increased operating current and speed. The transistor includes a drain, an insulator, and a source formed in layers and vertically arranged with respect to a substrate and each other. The drain, however, and source layers form a plurality of non-coplanar surfaces with respect to the substrate. The device further includes a deposited semiconductor material overlying the non-coplanar surfaces to form a plurality of current conduction channels between the drain and source. A gate insulator overlies the semiconductor material, and a gate electrode overlies the gate insulator. The devices can also include carrier injection structure including a doped semiconductor material electrically coupled to the drain, the source, and the deposited semiconductor material for increasing the injection of current conduction carriers in the current conduction channels.

REFERENCES:
patent: 3293512 (1966-12-01), Simmons et al.
patent: 3304469 (1967-02-01), Weimer
patent: 3313988 (1967-04-01), Drumheller
patent: 3384792 (1968-05-01), Kazan et al.
patent: 3493812 (1970-02-01), Weimer
patent: 3500142 (1970-03-01), Kahng
patent: 3669661 (1972-06-01), Page et al.
patent: 4203123 (1980-05-01), Shanks
patent: 4291318 (1981-09-01), Sansregret
patent: 4441973 (1984-04-01), Noguchi
patent: 4471371 (1984-09-01), Hamano

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