High current thin film transistor

Details High current thin film transistor High current thin film transistor

1988-03-29

1991-02-05

Wojciechowicz, Edward J.

357 4, 357 237, 357 2311, 357 52, 357 53, 357 55, H01L 2978

Patent

active

049909770

ABSTRACT:
A thin film transistor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, at least one finger-like source electrode, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, and a drain electrode layer contiguous with the semiconductor layer. The length of the current path between the source electrode and the drain electrode layer is defined by a first path portion located at the semiconductor/gate dielectric interface and extending, between adjacent source elements, substantially parallel to the interface, and a second path portion whose length is substantially coextensive with the thickness of the semiconductor layer.

REFERENCES:
patent: 4746960 (1988-05-01), Valeri et al.
patent: 4803533 (1989-02-01), Chang et al.
patent: 4866495 (1989-09-01), Kinzer

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