High current PNP transistor forming part of an integrated monoli

Details High current PNP transistor forming part of an integrated monoli High current PNP transistor forming part of an integrated monoli

1983-03-08

1986-01-14

Larkins, William D.

357 44, 357 48, H01L 2704

Patent

active

045648557

ABSTRACT:
A structure associating a high current NPN transistor with a PNP control transistor also able to withstand relatively high currents in an integrated circuit structure. This structure comprises an N.sup.+ type substrate overlaid by a P type epitaxied layer and a second N type epitaxied layer. The PNP transistor is disposed in the center of a region defined by two successive peripheral isolating walls. The NPN transistor is disposed in the annular zone. In this zone, the N.sup.+ substrate and the N layer are connected together by a buried N.sup.+ type layer locally short-circuiting the P type layer along a ring, thus isolating the central part of this layer at the level of the PNP transistor.

REFERENCES:
patent: 3868722 (1975-02-01), Le Can
patent: 4054900 (1977-10-01), Tokumaru et al.
patent: 4110782 (1978-08-01), Nelson et al.
patent: 4160988 (1979-07-01), Russell
patent: 4277794 (1981-07-01), Nuzillat

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