High current lateral transistor structure

Details High current lateral transistor structure High current lateral transistor structure

1986-07-21

1987-08-04

Wojciechowicz, Edward J.

357 48, 357 86, H01L 2972

Patent

active

046849700

ABSTRACT:
A high current lateral transistor for an integrated circuit device is disclosed. The emitter and collector regions extend into the base region for a distance of approximately one half the thickness of the base region. A second region of the same conductivity type as the collector, surrounds the collector and is spaced therefrom. The base contact shorts together this second region and the base region so that when the transistor goes into saturation excess current will not flow into the substrate.

REFERENCES:
patent: 4027325 (1977-05-01), Genesi
patent: 4117507 (1978-09-01), Pacor
patent: 4125853 (1978-11-01), Fulton et al.
patent: 4489341 (1984-12-01), Mayrand
patent: 4544940 (1985-10-01), Weaver et al.

Affiliated with

Also associated with

Rating

High current lateral transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High current lateral transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High current lateral transistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886526