High current ion implanter and method of ion implant by the impl

Details High current ion implanter and method of ion implant by the impl High current ion implanter and method of ion implant by the impl

1997-01-29

1999-01-26

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 37317

Patent

active

058641432

ABSTRACT:
An ion implantation apparatus and process for ion implantation which eliminates the deterioration of device characteristics in the ion implantation process to a trench capacitor of a DRAM and increases the beam current without deteriorating the device characteristics.
A high current ion implanter includes an implantation chamber, and arranged in the following order: a bias plate, a secondary electron implantation cylinder and an extension cylinder. The extension cylinder is adjacent to the implantation chamber, held to ground potential, and has a length of 10 to 25 cm..

REFERENCES:
patent: 5148034 (1992-09-01), Koike

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