High current interconnect structure for IC memory device...

Details High current interconnect structure for IC memory device... High current interconnect structure for IC memory device...

2005-12-20

2008-12-30

Pert, Evan (Department: 2826)

Static information storage and retrieval

Interconnection arrangements

Magnetic

C365S158000

Reexamination Certificate

active

07471539

ABSTRACT:
A method and system for a high current semiconductor memory cell provides a semiconductor memory cell with two current carrying structures. At least one of the current carrying structures is segmented and formed of narrow wire segments from one or more levels coupled to wider connective squares of another level. The wire segments may be a conductive material and the connective squares a refractory material. The short length wire segments may include a length less than the average grain size of the material of which they are formed.

REFERENCES:
patent: 6424561 (2002-07-01), Li et al.
patent: 6909629 (2005-06-01), Theel
patent: 6940749 (2005-09-01), Tsang
patent: 7020004 (2006-03-01), Hurst et al.

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