High-current integrated circuit with wiring for minimized on-res

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

257328, 257341, 327564, H01L 2910, H01L 29784

Patent

active

054573483

ABSTRACT:
On-resistance is minimized in a high-current integrated circuit by efficient use of wiring spaces for various layers in a wiring construction with multilayer-wiring connections between transistor electrode regions and electrode terminals. The construction utilizes multiple wiring layers and interlayer insulation films between the wiring layers, which insulation films have connecting holes at specified portions of the wiring structure. By incorporating connecting holes at select locations, and utilizing spaces which are not used for connecting holes as spaces for routing different wiring layers, the wiring structure allows overlapping wiring connections between the transistor electrode regions and the electrode terminals.

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Low Resistance Power LDMOSFET Using Double Metal Process Technology; Hoshi et al. pp. 61-63, Jun. 1991.

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