Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-02-25
1995-10-24
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257401, 257776, H01L 2710, H01L 2348, H01L 29735
Patent
active
054612594
ABSTRACT:
Collective transistors in a high-current IC are arranged in the column and row directions on a substrate, with each row having two collective transistors. The collective transistors are connected in a multi-phase half bridge circuit by wiring conductors which extend in the row direction and by a pair of wiring conductors which extend in the column direction. Each wiring conductor in the row direction includes a top conductive layer which is positioned over a first one of the collective transistors in the respective row and a bottom conductive layer which is positioned over the second collective transistor in the respective row, the top and bottom conductive layers being connected to one another through a connecting hole in an interlayer insulation film. One of the wiring conductors which extends in the column direction includes a bottom conductive layer which is positioned above the first collective transistor and the other wiring conductor which extends in the column direction includes a top conductive layer which is positioned over the second collective transistor.
REFERENCES:
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5025299 (1991-06-01), Arnould
patent: 5047825 (1991-09-01), Yasaka et al.
patent: 5184202 (1993-02-01), Uchida
Kitamura Akio
Yano Yukio
Fuji Electric & Co., Ltd.
Limanek Robert P.
Lynt Christopher H.
Williams Alexander Oscar
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