High current, high voltage breakdown field effect transistor

Details High current, high voltage breakdown field effect transistor High current, high voltage breakdown field effect transistor

1990-03-15

1992-01-28

James, Andrew J.

357 16, 357 52, 357 61, H01L 2980, H01L 29161, H01L 2934

Patent

active

050847430

ABSTRACT:
The gate voltage breakdown of an integrated circuit field effect transistor, especially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an electron trap layer on the surface of the device, under the gate contact and extending beyond the gate contact towards the drain contact. The electron trap layer is preferably a high resisitivity lattice matched monocrystalline layer having at least 10.sup.18 traps per cubic centimeter. For gallium arsenide based transistors, the electron trap layer is preferably formed by low temperature molecular beam epitaxy (MBE) of gallium and arsenic fluxes, to produce a monocrystalline gallium arsenide layer having 1% excess arsenic. For indium phosphide based transistors, the electron trap layer is preferably formed by low temperature MBE of aluminum, indium and arsenic fluxes to produce a monocrystalline aluminum indium arsenide layer having 1% excess arsenic.

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