1989-04-06
1991-04-02
Hille, Rolf
357 39, H01L 2974, H01L 29747
Patent
active
050050656
ABSTRACT:
This GTO thyristor comprises: (i) a cathode layer that is divided into a large number of cathode-layer fingers, (ii) a gate layer contiguous with the fingers, with a PN junction J1 between each finger and the gate layer, (iii) a cathode electrode on each finger, and (iv) a gate electrode on the gate layer having portions surrounding the fingers disposed in spaced relation to the fingers. Turn-off of the GTO thyristor is effected by forcing a turn-off current to flow between the cathode electrode of each finger and the gate electrode through the associated PN junction J1. This PN junction at each finger has a centrally-located region that is characterized by an avalanche voltage that is substantially lower than the avalanche voltage that characterizes this junction in the region of the junction surrounding the centrally-located region, and this relatively lower avalanche voltage enhances the current turn-off capabilities of the GTO thyristor.
REFERENCES:
Semiconductor Controlled Rectifiers by F. E. Gentry et al., published by Prentice-Hall, Inc., Englewood Cliffs, NJ in 1964, pp. 123-129 and 264-267.
Modern Power Devices by B. J. Baliga, published by John Wiley and Sons in 1987, New York, NY, pp. 401-403.
Semiconductor Power Devices by S. K. Ghandi, published by John Wiely and Sons, New York, NY in 1977, pp. 235-243.
Major Leroy B.
McIntyre, deceased James E.
Piccone Dante E.
Fahmy Wael
Freedman William
General Electric Company
Hille Rolf
Policinski Henry J.
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