High coupling ratio electrically programmable ROM

Details High coupling ratio electrically programmable ROM High coupling ratio electrically programmable ROM

1979-09-17

1982-04-27

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

357 54, 365185, H01L 2172

Patent

active

043263313

ABSTRACT:
An electrically programmable memory array of the floating gate type with a high coupling ratio is made by a process which allows the edges of the floating gates to be self-aligned with the edges of the control gates. The source and drain regions are formed prior to applying the first level polysilicon by a process which leaves these regions covered with thick oxide, rather than using the polysilicon as a mask to define the gate areas. The ratio of the capacitance between the floating gate and control gate to the total capacitance at the floating gate is increased by extending the floating gate out over the source and drain since the thick oxide reduces coupling from the floating gate to the source and drain.

REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 4114255 (1978-09-01), Salsbury et al.
patent: 4142926 (1979-03-01), Morgan
patent: 4193183 (1980-03-01), Klein

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