Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-11-22
1994-02-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 94, 257184, 257432, 257615, H01L 2712, H01L 29161, H01L 2714
Patent
active
052869822
ABSTRACT:
A thin transition layer (13) is employed to provide alignment between an electron wave function (29) and a hole wave function (37) of an optical modulator (10) for a wide range of applied voltage values that are less than a predetermined value. Over this range of voltages, the modulator (10) is in an off state and substantially absorbs incident light (19). For applied voltages in excess of the predetermined value, the electron (29) and hole wave (37) function alignment is diminished thereby allowing light (19) to be transmitted through the modulator (10).
REFERENCES:
patent: 5172384 (1992-12-01), Goronkin et al.
IEEE Journal of Quantum Electronics, vol. 26, No. 2, pp. 296-304 Feb. 1990 by Lengyel et al.
Ackley Donald E.
Goronkin Herbert
Lebby Michael S.
Barbee Joe E.
Hightower Robert F.
Motorola Inc.
Prenty Mark V.
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