Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1997-11-17
1999-02-09
Brown, Peter Toby
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438462, 438463, 438700, H01L 21302
Patent
active
058693831
ABSTRACT:
An improved alignment mark used by a laser trimming tool to locate fuses in an underlying integrated circuit is formed using conventional processing sequences. The design features high resolution and improved low noise characteristics. The alignment mark is etched in a shallow layer over a metal layer rather than in the metal itself. The edges which are sensed by the scanning alignment laser of the trimming tool have their elevated portions external to the alignment mark. The improved design replaces a prior art design in which the metal mark protruded from a deep area in the site region. Debris in deep areas adjacent to alignment marks etched in metal, is avoided by the improved design. The absence of this debris virtually eliminates noise in the alignment scan thereby greatly reducing alignment errors.
REFERENCES:
patent: 4992394 (1991-02-01), Kostelak, Jr. et al.
patent: 5157003 (1992-10-01), Tsuji et al.
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5314831 (1994-05-01), Hirae et al.
patent: 5369050 (1994-11-01), Kawai
patent: 5401691 (1995-03-01), Caldwell
patent: 5500392 (1996-03-01), Reynolds et al.
patent: 5668030 (1997-09-01), Chung et al.
patent: 5691232 (1997-11-01), Bashir et al.
S. Wolf, "Silicon Processing For The VLSI Era"-vol. 2, Lattice Press, Sunset Beach, CA, 1990, p. 275.
S. Wolf, "Silicon Processing For The VLSI Era", vol. 3. Lattice Press, Sunset Beach, CA, 1995, p. 598.
Chien Rong-Wu
Wu Kuo-Chang
Ackerman Stephen B.
Brown Peter Toby
Oh Edwin
Saile George O.
Vanguard International Semiconductor Corporation
LandOfFree
High contrast, low noise alignment mark for laser trimming of re does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High contrast, low noise alignment mark for laser trimming of re, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High contrast, low noise alignment mark for laser trimming of re will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1948169