High-contrast laser mark on substrate surfaces

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks

Reexamination Certificate

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Details

C257SE23179, C438S401000, C438S462000, C438S975000

Reexamination Certificate

active

07989967

ABSTRACT:
As part of a first configured laser operation, a smooth, more reflective marking area is formed at a surface of a substrate (e.g., integral heat spreader, or IHS). In a second configured laser operation, a mark is formed at the surface of the substrate within the marking area. The mark contrasts strongly with the reflective surface of the substrate in the marking area. As a result, the mark may be read with an optoelectronic imaging system with a higher rate of reliability than marks disposed at a substrate surface having a microtopographical profile with greater variation from a nominal surface plane. An IHS with a mark so disposed provides benefits when include as a portion of an integrated circuit package, which in turn provides benefits when included as a portion of an electronic system.

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Office Communication mailed Jan. 14, 2009, U.S. Appl. No. 11/591,001, filed Oct. 31, 2006.

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