High-conductivity semiconductor material having a dopant compris

Details High-conductivity semiconductor material having a dopant compris High-conductivity semiconductor material having a dopant compris

1996-05-08

1998-06-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257101, 257102, 257103, H01L 3300

Patent

active

057675333

ABSTRACT:
A method of providing shallow acceptor and donor energy levels to produce higher conductivity semiconductor materials, relies on the coulombic pairing of donor and acceptor elements. One exemplary embodiment is applied to create shallow acceptor levels in the III-V nitride materials via the coulombic pairing of group I elements which, in principle, act as double acceptors occupying metal lattice sites with group IV or group VI elements which act as single donors occupying metal or nitrogen lattice sites, respectively. The resulting pairs act as single acceptors with an energy level much closer to the valence band edge than that of either the first or second level of the group I element acceptors in their unpaired state. This approach, when optimized, can result in creating acceptor levels much shallower than the Mg acceptors currently used to make p-type GaN and its alloys.

REFERENCES:
patent: 5578839 (1996-11-01), Nakamuran et al.
Journal of Applied Physics, 49, 5928 (1978) by H.R. Vydyanath; J.S. Lorenzo; and F.A. Kroger, "Defect Pairing Diffusion, And Solubility Studies In Selenium Doped Silicon" no month.

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