High conductivity interconnection line

Details High conductivity interconnection line High conductivity interconnection line

1995-06-05

1997-08-19

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257741, 257750, 257751, 257762, 257784, H01L 2348

Patent

active

056592019

ABSTRACT:
High conductivity interconnection lines are formed of high conductivity material, such as copper, employing barrier layers impervious to the diffusion of copper atoms. Higher operating speeds are obtained with conductive interconnection lines, preferably copper interconnection lines, formed above the wire bonding layer.

REFERENCES:
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 5060050 (1991-10-01), Tsuneoka et al.
patent: 5235212 (1993-08-01), Shimizu et al.
"New Interconnect Materials: Chasing the Promise of Faster Chips," P. Singer, Semiconductor International, Nov. 1994, pp. 52-56.
"Passivation Schemes for Copper/Polymer Thin-Film Interconnections Used in Multichip Modules," G.M. Adema, et al., IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 16, No. 1, Feb. 1993, pp. 53-59.

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