High conductance plasma containment structure

Details High conductance plasma containment structure High conductance plasma containment structure

1997-10-24

2000-04-18

Meeks, Timothy

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723R, 118723E, H05H 100, C23C 1600

Patent

active

060511001

ABSTRACT:
Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the cross-sectional dimensions parallel to the plate surface than the thickness of the dark space or plasma sheath. This plasma containment plate allows high conductance for conditions including those of long molecular mean free path and thick material deposits on the interior chamber of the plasma reactor.

REFERENCES:
patent: 4384938 (1983-05-01), Desilets et al.
patent: 4717448 (1988-01-01), Cox et al.
patent: 5074985 (1991-12-01), Tamura et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5221425 (1993-06-01), Blanchard et al.
patent: 5498313 (1996-03-01), Bailey et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5639334 (1997-06-01), Camale et al.

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