High concentration doped semiconductor

Details High concentration doped semiconductor High concentration doped semiconductor

1997-02-27

1999-11-09

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

257 12, 257194, 257609, H01L 2358

Patent

active

059820241

ABSTRACT:
A semiconductor comprising an n-type semiconductor layer 1 with donor impurities added thereto, a semiconductor layer 2 having the value of energy from vacuum level to Fermi level larger than the value of energy from vacuum level to the lower end of the conduction band of the n-type semiconductor 1 and a junction connected to said semiconductor layer 2, characterized in that the donor impurities concentration (N.sub.d) in the range of thickness of the depletion layer generated in said n-type semiconductor layer 1 in contact with the junction boundary is at least

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A. R. Clawson, "MOCVD Grown Si-Doped n.sup.+ InP Layers for the Subcollector Region in HBTs," Proceedings of the International Conference on Indium Phosphide and Related Materials, Santa Barbara, March 27-31, 1994, Conf. No. 6, Mar. 27, 1994, Institute of Electrical and Electronics Engineers, pp. 114-117.
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