High colour diamond layer

Details High colour diamond layer High colour diamond layer

2011-06-21

2011-06-21

Turner, Archene (Department: 1784)

Stock material or miscellaneous articles

Self-sustaining carbon mass or layer with impregnant or...

C117S068000, C117S093000, C117S092000, C117S929000, C427S577000

Reexamination Certificate

active

07964280

ABSTRACT:
A method of producing CVD diamond having a high color, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.

REFERENCES:
patent: 5391409 (1995-02-01), Shibata et al.
patent: 5443032 (1995-08-01), Vichr et al.
patent: 5474021 (1995-12-01), Tsuno et al.
patent: 5474816 (1995-12-01), Falabella
patent: 5635258 (1997-06-01), Chen et al.
patent: 5908503 (1999-06-01), Sumiya et al.
patent: 6096129 (2000-08-01), Saito et al.
patent: 6582513 (2003-06-01), Linares et al.
patent: 6833027 (2004-12-01), Butler et al.
patent: 7128974 (2006-10-01), Scarsbrook et al.
patent: 7160617 (2007-01-01), Scarsbrook et al.
patent: 7172655 (2007-02-01), Twitchen et al.
patent: 2003/0131787 (2003-07-01), Linares et al.
patent: 2004/0180205 (2004-09-01), Scarsbrook et al.
patent: 2004/0194690 (2004-10-01), Twitchen et al.
patent: 0 316 856 (1989-05-01), None
patent: 0 507 497 (1992-10-01), None
patent: 0 589 464 (1994-03-01), None
patent: 0 615 954 (1994-09-01), None
patent: 0 715 885 (1996-06-01), None
patent: 1 752 566 (2007-02-01), None
patent: 1-131014 (1989-05-01), None
patent: 6-107494 (1994-04-01), None
patent: 6-263418 (1994-09-01), None
patent: 7-277890 (1995-10-01), None
patent: 9-165295 (1997-06-01), None
patent: 11-1392 (1999-01-01), None
patent: 2005-132653 (2005-05-01), None
patent: 03 052177 (2003-06-01), None
patent: 2005 061400 (2005-07-01), None
patent: WO 2005/116306 (2005-12-01), None
Eaton, et al., “Co-doping of Diamond with Boron and Sulfur”, Electrochemical and Solid-State Letters, vol. 5, No. 8, pp. G65-G68, 2002.
Eaton, et al, “Diamond growth in the presence of boron and sulfur”, Diamond and Related Materials , vol. 12, No. 10-11, pp. 1627-1632, 2003.
Cao, et al., “Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical-vapor deposition”, Journal of Applied Physics, vol. 78, No. 5, pp. 3125-3128, 1995.
Musale, et al., “Roman, photoluminescence and morphological studies of Si- and N-doped diamond films grown on Si (100) substrate by hot-filament chemical vapor deposition technique”, Diamond and Related Materials . vol. 11, No. 1, pp. 75-86, 2002.
Hu, et al., “Electrical and structural properties of boron and phosphorus co-doped diamond films”, Carbon, vol. 42, No. 8-9, pp. 1501-11506, 2004.
P. Kania, et al., Diamond and Related Materials, vol. 4, pp. 425-428 (1995).
J. Michler, et al., J. Appl. Phys., vol. 83, No. 1, pp. 187-197 (1998).
R. Locher, et al., Appl. Phys. Lett., vol. 65, No. 1, pp. 34-36 (1994).
I.I. Vlasov, et al., Phys. Stat. Sol, vol. (a)181, No. 83, pp. 83-90 (2000).
P.E. Pehrsson, et al., Mat. Res. Soc. Symp, Proc., vol. 416, pp. 51-56 (1996).
U.S. Appl. No. 12/245,002, filed Oct. 3, 2008, Scarsbrook, et al.
Qi Liang, et al., “Effect of Nitrogen Addition on the Morphology and Structure of Boron-doped Nanostructured Diamond Films”, Applied Physics Letters, vol. 83, No. 24, Dec. 15, 2003, pp. 5047-5049.
T. Hsu, et al., “Electron Field Emission of Nanocrystalline Diamond Films Co-doped with Boron and Nitrogen”, 2001 Proceedings of 14th International Vacuum Microelectronics Conference, pp. 273-274.
I-Nan Lin, et al. “Improvement on Electron Field Emission Properties of Nanocrystalline Diamond Films by Co-doping of Boron and Nitrogen”, J. Vac. Sci. Technol. B 21 (3), May/Jun. 2003, pp. 1074-1079.
Ichizo Yagi, et al., “The Effects of Nitrogen and Plasma Power on Electrochemical Properties of Boron-Doped Diamond Electrodes Grown by MPCVD”, Journal of the Electrochemical Society, 149 (1), 2002, pp. E1-E5.

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