High CF.sub.4 flow-reactive ion etch for aluminum patterning

Details High CF.sub.4 flow-reactive ion etch for aluminum patterning High CF.sub.4 flow-reactive ion etch for aluminum patterning

1992-05-08

1993-04-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156643, 156646, 148DIG131, H01L 21465

Patent

active

052022919

ABSTRACT:
An anisotropic reactive ion etching of an aluminum metal film of a semiconductor device. The device is placed in a reactive ion etcher using a CF.sub.4, Cl.sub.2 and BCl.sub.3 gas mixture to anisotropically etch the aluminum metal film layer wherein the gas mixture has a ratio of CF.sub.4 :Cl.sub.2 such that the aluminum etch rate increases as the amount of CF.sub.4 relative to Cl.sub.2 increases.

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Hortwitz; "Reactive sputter etching . . . based on CF.sub.4 and Cl.sub.2 " J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 1408-1411.
Proceedings of the Fifth Symposium on Plasma Processing, vol. 85-1, The Electromechanical Society, Inc., 1985.

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