Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-06-21
2005-06-21
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257S043000, C257S079000, C257S080000, C428S432000, C428S642000, C438S086000, C438S104000, C438S754000
Reexamination Certificate
active
06908782
ABSTRACT:
A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.
REFERENCES:
patent: 4612411 (1986-09-01), Wieting et al.
patent: 5078803 (1992-01-01), Pier et al.
patent: 5324365 (1994-06-01), Niwa
patent: 5420043 (1995-05-01), Niwa
patent: 5458753 (1995-10-01), Sato et al.
patent: 5578501 (1996-11-01), Niwa
patent: 5604133 (1997-02-01), Aoike
patent: 5612229 (1997-03-01), Yoshida
patent: 5620924 (1997-04-01), Takizawa et al.
patent: 5716480 (1998-02-01), Matsuyama et al.
patent: 5804466 (1998-09-01), Arao et al.
patent: 5913986 (1999-06-01), Matsuyama et al.
patent: 5990416 (1999-11-01), Windisch, Jr. et al.
patent: 6040521 (2000-03-01), Kushiya et al.
patent: 6043427 (2000-03-01), Nishimoto
patent: 6107116 (2000-08-01), Kariya et al.
patent: 6187150 (2001-02-01), Yoshimi et al.
patent: 6238808 (2001-05-01), Arao et al.
patent: 6242687 (2001-06-01), Schropp
Joseph et al., “P-type electrical conduction in ZnO thin films by Ga and N codoping”, Jpn. J. Appl. Phys. vol. 38 (1999), pp 1205-1207.
PCT Publication WO00/22202, Yoshida, H. et al. p-Type ZnO Single Crystal and Method for Producing the Same, Apr. 20, 2000.
Y. Yan and S.B. Zhang, “Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO” American Phys. Society, vol. 86, No. 25, Jun. 18, 2001, pps. 5723-5726.
K. Iwata et al., “Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE” Journal of Crystal Growth 209 (2000) Elsevier, pps. 526-531.
A.E. Delahoy et al., “Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics,” Mater. Res. Soc. Symp. Proc. vol. 426, 1996, pps. 467-477.
P. Yu et al., “Room Temperature Stimulated Emission from ZnO Quantum Dot Films,” Proc. 23rd Intl. Conf. Physics of Semiconductors, Berlin, 1996, vol. 2, pp. 1453-1456.
G.F. Neumark, “Achievement of Well Conducting Wide-Band-Gap Semiconductors: Role of Solubility and Nonequilbrium Impurity Incorporations,” Phys. Rev. Lett. 62, 1800 (1989).
T. Minami et al., “Highly Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering,” Jpn. J. Appl. Phys. 24, L781 (1985).
S.B. Zhang et al., “A phenomenological model for systematization and prediction of doping limits in II-VI and I-III-V12 compounds,” J. Appl. Phys. 83, 3192 (1998).
D.J. Chadi, “Doping in ZnSe, ZnTe, MgSe, and MgTe Wide-Band-Bap Semiconductors,” Phys. Rev. Lett. 72, 534 (1994).
S.B. Zhang et al., “Microscopic Origin of the Phenomenological Equilibrium ‘Doping Limit Rule’ in n-Type III-V Semiconductors,” Phys. Rev. Lett. 84, 1232 (2000).
T. Minami et al., “Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering,” Jpn. J. Appl. Phys. 24, L781 (1985). ibid, 25, L776 (1986).
J. Hu et al., “Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells,” Solar Cells 30, 437 (1991).
R.M. Park et al., “p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth,” Appl. Phys. Lett. 57, 2127 (1990).
A. Kobayashi et al., “Deep energy levels of defects in the wurtzite semiconductors A 1N, CdS, CdSe, ZnS, and ZnO,” Phys. Rev. B 28, 946 (1983).
A.F. Kohan et al., “First-principles study of native point defects in ZnO,” Phys. Rev. B 61, 15019 (2000).
S.B. Zhang et al., “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63, 75205 (2001).
M. Joseph et al., “p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping,” Jpn. J. Appl. Phys. 38, L1205 (1999).
H. Katayama-Yoshida et al., “New Materials of the Low-Resistive p-Type ZnO and Transparent Ferromagnet of ZnO: Prediction vs. Experiment,” MRS Workshop on Transparent Conducting Oxides, Denver 2000.
K. Minegishi et al., “Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition,” Jpn. J. Appl. Phys. 36, L1453 (1997).
Xin-Li Guo et al., “Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source,” J. Crystal Growth 223, 135 (2001).
Faughnan, B.W. and Crandall, R.S., entitled, “Electrochromic Displays Based on WO3” Topics in Applied Physics, 40: 181-211, 1980.
Yan Yanfa
Zhang Shengbai
Kang Donghee
Midwest Research Instittue
White Paul J.
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