High capacity sputter-etching apparatus

Details High capacity sputter-etching apparatus High capacity sputter-etching apparatus

1979-08-09

1981-05-19

Massie, Jerome W.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 204192E, 269287, C23C 1500

Patent

active

042683742

ABSTRACT:
A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.

REFERENCES:
patent: 3617459 (1971-11-01), Logan
patent: 3617463 (1971-11-01), Gregor et al.
patent: 3630881 (1971-12-01), Wester et al.
patent: 3644191 (1972-02-01), Matsushima
patent: 3707452 (1972-12-01), Wester et al.
patent: 3796649 (1974-03-01), Lamont et al.
patent: 3823048 (1974-07-01), Hetrich
patent: 3856654 (1974-12-01), George
Koenig et al, "Application . . . Sputtering", IBM Journal of Research Development, (3/70), pp. 168-171.
Budo et al, "Multiusage . . . Etch, IBM Technical Disclosure Bulletin, vol. 15, No. 5, (10/77), p. 1695.
Smith, "Ion Etching . . . Delineation", Journal of Vacuum Science Technology, vol. 13, No. 5 (10/76), pp. 1008-1022.
Hosokichi et al, "RF Sputter- . . . Gases", Proc. 6th International Vacuum Congress (1974), pp. 435-438.
Somekh, "Introduction . . . Etching", Journal of Vacuum Science Technology, vol. 13, No. 5, pp. 1003-1007.

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