High capacity semiconductor dopant deposition/oxidization proces

Fishing – trapping – and vermin destroying

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437145, 437248, 437952, 437955, 148DIG30, 148DIG35, H01L 21225, H01L 21385

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054948525

ABSTRACT:
A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.

REFERENCES:
patent: 3507716 (1970-04-01), Nishida et al.
patent: 3676231 (1972-07-01), Medvecky et al.
patent: 3808060 (1974-04-01), Hays et al.
patent: 3932239 (1976-01-01), Brown
patent: 4054899 (1977-10-01), Stehlin et al.
patent: 4588454 (1986-05-01), Khadder et al.
patent: 4619036 (1986-10-01), Havemann et al.
patent: 5244831 (1993-09-01), Hindman et al.
Semiconductor Technology Handbook, Trapp et al., 5th ed., 1985, Technology Assoc., Portola Valley, CA, Bofors Inc., San Mateo, CA, DIF 1-pp. 6.1-6.31.
Wolf. Silicon Processing for the VLSI Era Vol. 1-Process Technology pp. 242-248, and 264-266., Lattace Press 1986.

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