High capacity semiconductor dopant deposition/oxidization proces

Details High capacity semiconductor dopant deposition/oxidization proces High capacity semiconductor dopant deposition/oxidization proces

1993-07-28

1996-02-27

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437145, 437248, 437952, 437955, 148DIG30, 148DIG35, H01L 21225, H01L 21385

Patent

active

054948525

ABSTRACT:
A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.

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