High capacity memory with stacked layers

Details High capacity memory with stacked layers High capacity memory with stacked layers

2011-05-31

2011-05-31

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S679000, C257S723000, C257S777000, C257SE25013

Reexamination Certificate

active

07952183

ABSTRACT:
A element group includes a plurality of semiconductor elements stacked in a step-like shape on a wiring board. The semiconductor elements are electrically connect to connection pads of the wiring board through metal wires. Among the plural semiconductor elements stacked in a step-like shape, the uppermost semiconductor element has a thickness larger than that of the semiconductor element immediately below it.

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