High capacity low cost multi-state magnetic memory

Details High capacity low cost multi-state magnetic memory High capacity low cost multi-state magnetic memory

2007-02-23

2011-11-15

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000, C365S171000, C257SE21665

Reexamination Certificate

active

08058696

ABSTRACT:
A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

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