High capacity etching apparatus and method

Details High capacity etching apparatus and method High capacity etching apparatus and method

1979-12-20

1981-11-03

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156345, 156643, 204298, C23C 1500

Patent

active

042984432

ABSTRACT:
An apparatus for high-throughput sputter etching or reactive sputter etching of wafers comprises a multi-faceted wafer holder centrally disposed within a cylindrical chamber. A source of r-f power is capacitively coupled to the holder and the cylindrical chamber is grounded. By establishing a suitable plasma within the chamber, simultaneous anisotropic etching of, for example, twenty-four 6-inch wafers can be achieved in an apparatus that is approximately the same size as a conventional parallel-plate reactor that has a capacity of only three 6-inch wafers.

REFERENCES:
patent: 3598710 (1971-08-01), Davidse
patent: 3844924 (1974-10-01), Cunningham et al.
patent: 3879597 (1975-04-01), Bersin et al.
patent: 3901784 (1975-08-01), Quinn et al.
patent: 3932232 (1976-01-01), Labuda et al.
patent: 4126530 (1978-11-01), Thornton

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