Coating apparatus – Gas or vapor deposition – With treating means
Patent
1990-02-09
1993-05-04
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118724, 118730, C23C 1648
Patent
active
052078353
ABSTRACT:
A barrel epitaxial reactor having a greater batch capacity than prior art barrel epitaxial reactors which produces an epitaxial layer quality at least as good as that produced by the prior art barrel epitaxial reactors is disclosed. The batch capacity of prior art barrel epitaxial reactors is improved by increasing the reaction chamber size and increasing the radiant heat source so that a uniform temperature is maintained over a larger flat zone in the reaction chamber. Also, forced air flow from the blower of the prior art reactor is distributed so that a positive air flow is maintained along the exterior wall of the reaction chamber and consequently the wall is maintained at a uniform cold temperature relative to the temperature of the reaction chamber.
REFERENCES:
patent: 3623712 (1972-11-01), McNeilly et al.
patent: 3796182 (1974-03-01), Rosler
patent: 3862397 (1975-01-01), Anderson
patent: 4047496 (1977-09-01), McNeilly et al.
patent: 4099041 (1978-07-01), Berkman et al.
patent: 4322592 (1982-03-01), Martin
patent: 4511788 (1985-04-01), Arai
patent: 4728389 (1988-03-01), Logar
patent: 4789771 (1988-12-01), Robinson
patent: 5053247 (1991-10-01), Moore
"Precision 7700 Epi System Specifications", Applied Materials, 1989.
AMC 7810 and 7820 Radiantly Heated Epitaxial Reactor Systems, p. 11.
Semiconductor Silicon 1973, The Electrochemical Society, Inc.
Bueker Richard
Moore Epitaxial Inc.
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