High capacity DRAM trench capacitor and methods of fabricating s

Details High capacity DRAM trench capacitor and methods of fabricating s High capacity DRAM trench capacitor and methods of fabricating s

1990-12-04

1991-11-12

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 236, 437 52, H01G 406, H01L 21265, H01C 2978

Patent

active

050652737

ABSTRACT:
A trench capacitor and a method of forming same within an integrated circuit. The capacitor includes a first plate electrode having a surface area comprised of an inner surface area of the trench and an outer surface area of an upstanding pillar structure that is formed within the trench and which extends upwardly from a bottom surface thereof. The pillar structure is physically and electrically contiguous with the semiconductor substrate and has the same type of electrical conductivity. The capacitor further includes a second plate electrode comprised of a region of electrically conductive material that substantially fills a volume of the trench. The capacitor further includes a thin layer of dielectric material interposed between the first plate electrode and the second plate electrode. The second plate electrode is conductively coupled to a planar access device through a conductive, self-aligned surface strap.

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