High capacitance structure in a semiconductor device

Details High capacitance structure in a semiconductor device High capacitance structure in a semiconductor device

1992-08-19

1993-05-04

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

257295, 257307, 257532, H01G 410, H01L 2702

Patent

active

052087255

ABSTRACT:
The present invention provides for a capacitor structure on a semiconductor substrate with an enhanced capacitance. The structure has a first layer of conducting strips parallel to each other on the substrate and a second layer of conducting strips which are parallel to each other. The second layer strips overlie and are substantially congruent to the first layer conducting strips in a top view of the semiconductor substrate. The first layer conducting strips are alternately connected to a first node and a second node, and the second layer conducting strips are alternately connected to the first node and the second node in such a manner that each first layer conducting strip and a second layer conducting strip overlying the first layer conducting strip are connected to different nodes. The first and second nodes form two opposing nodes of the capacitor structure.

REFERENCES:
patent: 3593319 (1971-07-01), Barber
patent: 4914546 (1990-04-01), Alter
patent: 5089878 (1992-02-01), Lee
patent: 5155658 (1992-10-01), Inam et al.

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