High capacitance low resistance electrode

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C438S171000, C438S210000, C438S239000, C257SE21008, C257SE21011

Reexamination Certificate

active

07459369

ABSTRACT:
Methods are provided for manufacturing an electrode. In one exemplary embodiment, the method includes the steps of contacting the silver layer with vanadium oxide, and heating the silver layer and vanadium oxide in an oxygen-containing atmosphere to form a silver vanadium oxide layer chemically bonded to the metal substrate.

REFERENCES:
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patent: 5369547 (1994-11-01), Evans
patent: 6807048 (2004-10-01), Nielsen et al.
patent: 2004/0064155 (2004-04-01), Norton et al.
patent: 2004/0240144 (2004-12-01), Schott et al.
patent: 2005/0090108 (2005-04-01), Hossick-Schott
patent: 2005/0098242 (2005-05-01), Hossick-Schott
patent: 2005/0146841 (2005-07-01), Schott et al.
patent: 2005/0177193 (2005-08-01), Nielsen et al.

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