Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-07-22
2008-07-22
Lindsay, Jr., Walter L. (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S239000, C438S250000, C438S253000, C438S393000, C438S396000, C257SE21008
Reexamination Certificate
active
11458563
ABSTRACT:
A dry titanium nitride (TiN) powder abrasion method roughens the surface of a valve metal foil for use as a cathode in an electrolytic capacitor. This increases the surface area of the foil, thereby increasing the double-layer capacitance of the cathode, and also mechanically alloys TiN powder to the surface of the foil, thereby increasing the pseudo-capacitance of the cathode. In one embodiment, a piece of thin titanium foil is mounted on a hard metal backing and at least one surface of the foil is abraded with fine titanium nitride powder. In another embodiment, a continuous metal foil tape is fed into a bead blasting box and at least one surface of the metal foil tape is abraded with TiN powder delivered by a bead blasting nozzle located within the bead blasting box. Accordingly, a cathode having increased capacitance capability is provided to more closely match the capacitance of a poly-anode stack.
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Lee Kyoung
Lindsay Jr. Walter L.
Mitchell Steven M.
Pacesetter Inc.
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