High capacitance capacitor in an integrated function block or an

Details High capacitance capacitor in an integrated function block or an High capacitance capacitor in an integrated function block or an

1995-06-06

1997-02-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257207, 257533, 257535, 257665, H01L 2710, H01L 2900, H01L 2358

Patent

active

056061978

ABSTRACT:
A method for creating a MOS-type capacitor structure in function blocks or integrated circuits. Each block or cell is provided with capacitors for decoupling purposes under the board metal supply lines without requiring any extra silicon surface. The buried capacitors can be designed under any board conductor path or on a chip made of a semiconductor material.

REFERENCES:
patent: 3619735 (1971-11-01), Chen et al.
patent: 4937649 (1990-06-01), Shiba et al.

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