Radiation imagery chemistry: process – composition – or product th – Radiation sensitive product – Silver compound sensitizer containing
Patent
1999-04-13
2000-09-05
Huff, Mark F.
Radiation imagery chemistry: process, composition, or product th
Radiation sensitive product
Silver compound sensitizer containing
430603, 430605, G03C 1035, G03C 109
Patent
active
061141054
ABSTRACT:
A high bromide {111} tabular grain emulsion is disclosed in which most of the tabular grains exhibit silver salt epitaxy at a single site. Most of the silver halide epitaxy sites contact an edge region of the tabular grains. These emulsions exhibit chemical sensitization by the epitaxy and surprising lower levels of desensitization by spectral sensitizing dyes.
REFERENCES:
patent: 4435501 (1984-03-01), Maskasky
patent: 5011767 (1991-04-01), Yamashita et al.
patent: 5494789 (1996-02-01), Daubendiek et al.
patent: 5503970 (1996-04-01), Olm et al.
patent: 5503971 (1996-04-01), Daubendiek et al.
patent: 5573902 (1996-11-01), Daubendiek et al.
patent: 5576168 (1996-11-01), Daubendiek et al.
patent: 5576171 (1996-11-01), Olm et al.
patent: 5582965 (1996-12-01), Deaton et al.
patent: 5612175 (1997-03-01), Eshelman et al.
patent: 5612176 (1997-03-01), Eshelman et al.
patent: 5612177 (1997-03-01), Levy et al.
patent: 5614359 (1997-03-01), Eshelman et al.
J.E. Maskasky "Epitaxial Selective Site Sensitization of Tabular Grain Emulsions" Journal of Imaging Science, vol. 32, No. 4, Jul./Aug. 1988.
Brust Thomas B.
Stich Bernard D.
Anderson Andrew J.
Eastman Kodak Company
Huff Mark F.
Thomas Carl O.
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