High-brightness light-emitting diode

Details High-brightness light-emitting diode High-brightness light-emitting diode

2008-03-11

2008-03-11

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S100000, C257SE25032

Reexamination Certificate

active

11138365

ABSTRACT:
A high-brightness light-emitting diode is disclosed. The high-brightness light-emitting diode, comprises: a chip; a base for holding the chip; and a transparent layer for covering the chip, wherein the chip is connected to an electrode by a metal wire. The improvement comprises an adhesive injection hole formed on the transparent layer for injecting a layer of fluorescent-powdered adhesive into it, thereby providing the light-emitting diode with the advantages such as good light collection and uniform light shape.

REFERENCES:
patent: 6924596 (2005-08-01), Sato et al.
patent: 2006/0186423 (2006-08-01), Blonder et al.

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