Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-01-15
2008-01-15
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S090000, C257S096000, C257SE33067, C257SE33068, C257SE33071, C257SE33072, C257SE33011, C257SE33028, C257SE33065
Reexamination Certificate
active
10892044
ABSTRACT:
The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.
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Chiang Yann-Jyh
Chiu Chi-Ying
Horng Ray-Hua
Wu Dong-Sing
Baxley Charles E.
National Chung-Hsing University
Sefer A.
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