High brightness light emitting diode

Details High brightness light emitting diode High brightness light emitting diode

1998-08-31

2000-05-23

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257101, H01L 2715, H01L 3112, H01L 3300

Patent

active

060668628

ABSTRACT:
A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type upper cladding structure. The upper cladding structure comprises an (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P four element compound semiconductor material. The improvement is that the upper cladding structure has a thin and very high resistivity layer inside.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5300791 (1994-04-01), Chen et al.
patent: 5359209 (1994-10-01), Huang
patent: 5606180 (1997-02-01), Hosoi et al.
patent: 5917201 (1999-06-01), Ming-Siann et al.

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