High brightness light-emitting device and manufacturing...

Details High brightness light-emitting device and manufacturing... High brightness light-emitting device and manufacturing...

2007-01-23

2007-01-23

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S039000, C438S046000

Reexamination Certificate

active

10870347

ABSTRACT:
A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.

REFERENCES:
patent: 6194743 (2001-02-01), Kondoh et al.
patent: 6936859 (2005-08-01), Uemura et al.
patent: 554549 (2003-09-01), None
patent: WO 01/47038 (2000-12-01), None

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