High brightness gallium nitride-based light emitting diode...

Details High brightness gallium nitride-based light emitting diode... High brightness gallium nitride-based light emitting diode...

2006-06-13

2006-06-13

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S081000, C257S099000

Reexamination Certificate

active

07061026

ABSTRACT:
A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

REFERENCES:
patent: 6569548 (2003-05-01), Yamamoto et al.
patent: 2005/0082558 (2005-04-01), Yang et al.

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