High breakdown voltage varistor

Details High breakdown voltage varistor High breakdown voltage varistor

1977-10-17

1980-01-22

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252519, 252520, 252521, H01B 108

Patent

active

041849841

ABSTRACT:
A metal oxide varistor with high breakdown electric field values, in excess of 1200 v.mm.sup.-1, is processed by sintering a mixture which comprises zinc oxide with significant amounts of bismuth oxide, from approximately 10 mol percent to approximately 25 mol percent silicon dioxide and other beneficial metal oxide additives at temperatures between 800.degree. C. and 1100.degree. C.

REFERENCES:
patent: 3764566 (1973-10-01), Matsuoka et al.
patent: 3962144 (1976-06-01), Matsuura et al.
patent: 4003855 (1977-01-01), Wong

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