High breakdown voltage silicon carbide transistor

Details High breakdown voltage silicon carbide transistor High breakdown voltage silicon carbide transistor

1995-08-28

1996-10-29

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257339, 257409, 257492, 257493, H01L 310312

Patent

active

055699375

ABSTRACT:
A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). A damage termination layer (27) is utilized to facilitate providing a high breakdown voltage. Field plates (23,24) also assists in increasing the breakdown voltage and decreasing the on-resistance of the transistor (10).

REFERENCES:
patent: 5406110 (1995-04-01), Kwon et al.
V. Krishnamurthy et al., "Planar Depletion-Mode 6H-SiC MOSFETs", Inst. Phys. Conf. Ser. No. 137: Chapter 6, Paper presented at the 5th SiC and Related Materials Conf., Washington DC, 1993, pp. 483-486.

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