Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-09-15
1998-08-18
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257162, 257343, 257331, H01L 2974, H01L 31111, H01L 2976, H01L 2994
Patent
active
057961255
ABSTRACT:
A high breakdown voltage semiconductor device. The device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, an active region formed on the insulating film, drain and base regions formed in a surface portion of the active region, and a source region formed in a surface portion of the base region. First and second gate insulating films are formed on inner surfaces of first and second grooves penetrating the base region so as to come in contact with the source region and reaching the active region, with first and second electrodes being buried in the first and second grooves. Two or more channel regions are formed in a MOS structure constructed by the gate insulating film, the gate electrode, the source region, the base region and the active region.
REFERENCES:
patent: 4960723 (1990-10-01), Davies
patent: 5034785 (1991-07-01), Blanchard
patent: 5434435 (1995-07-01), Baliga
patent: 5448083 (1995-09-01), Kitagawa et al.
patent: 5554872 (1996-09-01), Baba et al.
patent: 5557125 (1996-09-01), Shibib
Proceedings of 1995 International Symposium on Power Semiconductor Devices and ICs, pp. 141-145, Tomoko Matsudai, et al., "A Trench-Gate Injection Enhanced Lateral IEGT on Soi".
Proceedings of the 5.sup.th International Symposium on Power Semiconductor Devices and Ics, pp. 240-245, P.V. Gilbert, et al., "A Fully Integrable Insulated Gate Bipolar Tranistor with a Trench Gate Structure".
Improved Latch-Up Characteristics of the Ligbt with the P+ Cathode Well on the SOI Substrate, Byeong Hoon Lee, et al., International Conference on Solid State Devices and Materials, Yokohama, Aug. 1994, pp. 289-291.
A Trench-Gate Ligbt Structure and Two LMCT Structures in SOI Substrates, D.R. Disney, et al., International Symposium on Power Semiconductor Devices & IC's, Switzerland, May 31--Jun. 2, 1994, pp. 405-410.
Kitagawa Mitsuhiko
Matsudai Tomoko
Nakagawa Akio
Kabushiki Kaisha Toshiba
Loke Steven H.
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