High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1996-07-10

1998-03-17

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257135, 257140, 257378, H01L 2974, H01L 31111

Patent

active

057290318

ABSTRACT:
A p type collector region is formed at the side of collector surface of an n.sup.- region with an n type buffer region. This p type collector region has a structure including a p type impurity region and a p.sup.+ impurity region. Impurity concentrations of the p type impurity region, the p.sup.30 impurity region and the n type buffer region are of a prescribed relationship, and the diffusion depth of the p type impurity region from the collector surface is not lower than 2.0 .mu.m. Thus, a semiconductor device in which turn-off loss is sufficiently low and which is not likely to be affected by thermal treatment upon formation of each of the impurity V regions can be obtained.

REFERENCES:
patent: 5162876 (1992-11-01), Kitagawa et al.
patent: 5200632 (1993-04-01), Sakurai
patent: 5331184 (1994-07-01), Kuwahara
patent: 5379089 (1995-01-01), Uenishi et al.
patent: 5396087 (1995-03-01), Baliga
patent: 5397905 (1995-03-01), Otsuki et al.

Affiliated with

Also associated with

Rating

High breakdown voltage semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High breakdown voltage semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High breakdown voltage semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-960403