High-breakdown-voltage semiconductor device

Details High-breakdown-voltage semiconductor device High-breakdown-voltage semiconductor device

1998-10-14

1999-08-03

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257343, 257345, 257195, 257403, 438291, 438307, H01L 2976, H01L 27108

Patent

active

059328975

ABSTRACT:
A high-breakdown-voltage semiconductor device has a first offset layer and a second offset layer the dosage of which is higher than that of the first offset layer. When the gate is in the ON state, the first offset layer functions as a resurf layer. When the gate is in the OFF state, part of the charge in the first offset layer is neutralized by a drain current flowing through an element having a low ON-resistance, however, the second offset layer functions as a resurf layer. When the drain current is of the second offset layer is given by n.sub.2 .gtoreq.I.sub.D

REFERENCES:
patent: 5552623 (1996-09-01), Nishizawa et al.
patent: 5686755 (1997-11-01), Malhi
patent: 5789778 (1998-08-01), Murai
patent: 5852314 (1998-12-01), Depetro et al.
patent: 5869872 (1999-02-01), Asai et al.

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