High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1989-06-09

1991-03-26

Larkins, William D.

357 55, 357 15, H01L 2940

Patent

active

050033727

ABSTRACT:
A semiconductor device having a grooved field plate(s), a grooved field limiting ring(s) or a combination of a grooved field plate(s) and grooved field limiting ring(s) is disclosed. The grooved modification of the conventional semiconductor results in an increased break-down voltage over the conventional semiconductor device. A method for manufacturing the grooved semiconductor device is disclosed.

REFERENCES:
patent: 4009483 (1977-02-01), Clark
patent: 4270137 (1981-05-01), Coe
patent: 4399449 (1983-08-01), Herman et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4567502 (1986-01-01), Nakagawa et al.

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