High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1999-09-10

2000-10-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

257476, 257488, 257491, 257928, H01L 27095, H01L 2947, H01L 29812, H01L 3107

Patent

active

061336173

ABSTRACT:
Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.

REFERENCES:
patent: 5162876 (1992-11-01), Kitagawa et al.
patent: 5523610 (1996-06-01), Kudo et al.
patent: 5640040 (1997-06-01), Nakagawa et al.
patent: 5982015 (1999-11-01), Hirayama et al.
M. Mehrotra, et al., "Comparison of High Voltage Power Rectifier Structures", IEEE, 5.sup.th International Symposium on Power Semiconductor Devices and ICs, (1993), pp. 199-204.
H. Funaki, et al., "Lateral Soi Diode Design Optimization for High Ruggedness and Low Temperature Dependence of Reverse Recovery Characteristics", Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, (1998), pp. 33-36.

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