Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2006-07-18
2006-07-18
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S481000, C257S551000
Reexamination Certificate
active
07078781
ABSTRACT:
A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, first trenches formed on the surface thereof in a longitudinal plane shape and in parallel, a Schottky electrode formed thereon and sandwiched between adjacent first trenches, a first region having an opposite conductivity type to the semiconductor layer continuously disposed in a sidewall and a bottom of each of the first trenches, a sidewall insulating film disposed on the sidewall, a second region of the opposite conductivity type disposed in the bottom of each of the first trenches, a third region disposed on the opposite surface of the semiconductor layer, a control electrode filling each of the first trenches in contact with the second region and connected to the Schottky electrode, a backside electrode formed on the third region, wherein second trenches communicate with the first trenches at both ends of longitudinal sides thereof, and the Schottky electrode is surrounded by the first and second trenches.
REFERENCES:
patent: 5663582 (1997-09-01), Nishizawa et al.
patent: 6252288 (2001-06-01), Chang
J.P. Henning, et al., “A Novel Self-Aligned Fabrication Process for Microwave Static Induction Transisitors in Silicon Carbide”, IEEE Electron Device Letters, vol. 21, No. 12, Dec. 2000, pp. 578-580.
K.J. Schoen, et al., “A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H-SiC”, IEEE Electron Device Letters, vol. 19, No. 4, Apr. 1998, pp. 97-99.
Jason P. Henning, “Design and Demonstration of C-Band Static Induction Transistors in 4H Silicon Carbide”, Device Research Conference Digest 1999, 57thAnnual 1999, pp. 48-49.
R.N. Gupta, et al., “A 600 V SiC Trench JFET”, Materials Science Forum vols. 389-393, Trans Tech Publications, Switzerland, 2002, pp. 1219-1222.
Hatakeyama Tetsuo
Shinohe Takashi
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