Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-02-15
2005-02-15
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S266000, C257S268000, C257S164000, C257S077000
Reexamination Certificate
active
06855970
ABSTRACT:
A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent ones of the trenches and having an impurity concentration higher than that of the semiconductor layer, a second region having opposite conductivity to the first regions and continuously disposed in a trench sidewall and bottom portion, a sidewall insulating film disposed on the second region of the trench sidewall, a third region disposed on the second region of the trench bottom portion and having the same conductivity as and the higher impurity concentration than the second region, a fourth region disposed on the back surface of the semiconductor layer, a first electrode formed on each first region, a second electrode connected to the third region, and a third electrode formed on the fourth region.
REFERENCES:
patent: 5663582 (1997-09-01), Nishizawa et al.
J. P. Henning, et al., “A Novel Self-Aligned Fabrication Process for Microwave Static Induction Transistors in Silicon Carbide”, IEEE Electron Device Letters, vol. 21, No. 12, Dec. 2000, pp. 578-580.
K. J. Schoen, et al., “A Dual-Metal-Trench Schottky Pinch-Rectifier in 4h-SiC”, IEEE Electron Device Letters, vol. 19, No. 4, Apr. 1998, pp. 97-99.
Jason P. Henning, “Design and Demonstration of C-Band Static Induction Transistors in 4H Silicon Carbide”, Device Research Conference Digest 1999, 57thAnnual 1999, pp. 48-49.
R. N. Gupta, et al., “A 600 V SiC Trench JFET”, Materials Science Forum vols. 389-393, Trans Tech Publications, Switzerland, 2002, pp. 1219-1222.
Hatakeyama Tetsuo
Shinohe Takashi
Kabushiki Kaisha Toshiba
Loke Steven
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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