High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1978-06-06

1980-12-30

Edlow, Martin H.

357 55, 357 88, 357 89, H01L 2990

Patent

active

042426901

ABSTRACT:
A precisely formed region of semiconductor material which correspondingly contains a precisely controlled amount of charge when depleted is provided in the proximity of a p-n junction in several kinds of semiconductor devices. This region is located within the selected semiconductor device in such a manner as to increase avalanche breakdown voltage of a p-n junction to near its ideal value and to reduce both peak bulk and peak surface electric fields.

REFERENCES:
patent: 3971061 (1976-07-01), Matsushita
patent: 4153904 (1979-05-01), Tasch, Jr.
patent: 4155777 (1979-05-22), Dunkley

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