High breakdown voltage resurf HFET

Details High breakdown voltage resurf HFET High breakdown voltage resurf HFET

1998-08-12

2000-08-08

Jackson, Jr., Jereme

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257496, 257623, H01L 31109

Patent

active

061005495

ABSTRACT:
A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.

REFERENCES:
patent: 5043776 (1991-08-01), Hida

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