High breakdown voltage push-pull circuit for semiconductor devic

Details High breakdown voltage push-pull circuit for semiconductor devic High breakdown voltage push-pull circuit for semiconductor devic

1997-12-18

2000-08-15

Wells, Kenneth B.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327108, 327111, H03B 100

Patent

active

061042188

ABSTRACT:
The chip size of the high breakdown voltage push-pull output circuit for the semiconductor device can be reduced by use of only the low breakdown voltage transistor elements. Between the voltage supply terminal HVCC and the ground terminal GND, the control transistor element (Q1) and the voltage transistor element (Q3) are connected in series and stacked vertically. In the same way, the voltage transistor element (Q4) and the control transistor element (Q2) are connected in series and stacked vertically. Further, the output terminal (OUT) is derived from between the voltage transistor element (Q3) and the voltage transistor element (Q4). The supply voltage of 12V supplied through the voltage supply terminal HVCC is divided as voltages of 6V by the bias circuit BI, and then supplied to the bases of the two voltage transistor elements (Q3 and Q4), respectively. When the output is low, the supply voltage of 12V is divided 1/2 by the control transistor element (Q1) and the voltage transistor element (Q3). On the other hand, when the output is high, the supply voltage of 12V is divided 1/2 by the voltage transistor element (Q4) and the control transistor element (Q2). Therefore, it is possible to construct a push-pull circuit with a high breakdown voltage by use of only the low breakdown voltage transistor elements.

REFERENCES:
patent: 5140194 (1992-08-01), Okitaka
patent: 5444401 (1995-08-01), Crafts
patent: 5473271 (1995-12-01), Little et al.
patent: 5659261 (1997-08-01), Bacrania et al.

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